We are pleased to offer procurement for Dla Land And Maritime part number 5962-8769001RA here on NSN Portal, a Microcircuit Set product that is listed with the NSN 5962-01-363-0915 for ease of identification. You have reached our Request for Quote (RFQ) form for this listing, where you are encouraged to submit details on your requirements to receive tailored purchasing options from our staff. As you will see, we ask that you offer key information on your pricing target, desired quantity, and more, as this will ensure that the representative who responds to your request is able to provide the most fitting solutions for your needs.
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Whether you procure part number 5962-8769001RA or other NSN products from our website, you can rest assured that we uphold full traceability for all items. For example, this particular listing traces back to Dla Land And Maritime through the CAGE Code 67268, as well as falls under FSC 5962 Microcircuits Electronic based on having the NSN 5962-01-363-0915. Furthermore, every purchase will be delivered with any applicable qualifying certifications or manufacturer trace documentation as per our NO CHINA SOURCING pledge. If you are ready to experience why professionals rely on us for their needs, request a quote for part number 5962-8769001RA today and take advantage of our industry-leading services.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-363-0915 Item PartTypeName: MICROCIRCUIT SET | 5962 | 013630915 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
5962-8769001RA | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0/100.0 DEG CELSIUS 1ST MEMORY-55.0/125.0 DEG CELSIUS 2ND MEMORY |
ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 1ST MEMORYD-8 MIL-M-38510 2ND MEMORY |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC 1ST MEMORYBIPOLAR METAL-OXIDE SEMICONDUCTOR 2ND MEMORY |
CSSL | DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
TTQY | TERMINAL TYPE AND QUANTITY | 24 CASE 1ST MEMORY20 CASE 2ND MEMORY |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CBBL | FEATURES PROVIDED | PROGRAMMED |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS 1ST MEMORY70.00 NANOSECONDS NOMINAL ACCESS 2ND MEMORY |
CZER | MEMORY DEVICE TYPE | EEPROM ERR-100 ERR-100ROM ERR-100 ERR-100 |
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