| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-136-1831 (001361831) |
| NCB Code | USA (00) |
| Manufacturer | C O D I Corp, International Diode Corp, Telcom Semiconductor Inc, Western Semiconductors Div, Goodrich Actuation Systems Ltd, Coherent Component Corp, Itt Semiconductors, Fairchild Semiconductor Corp, Semitronics Corp, Semiconductor Components Industries, Csr Industries Inc, Burns Aerospace Corp, Electronic Industries Inc, Military Specifications, General Semiconductor Inc, Lucas France Sa, Solitron Devices Inc, Gilbert Engineering Co Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1N813 | c o d i corp | semiconductor device diode | 16352 | RFQ |
| 1N813 | international diode corp | semiconductor device diode | 16068 | RFQ |
| 1N813 | telcom semiconductor inc | semiconductor device diode | 15818 | RFQ |
| 1N813 | western semiconductors div | semiconductor device diode | 12711 | RFQ |
| 661807-1 | goodrich actuation systems ltd | semiconductor device diode | f1688 | RFQ |
| 1N813 | coherent component corp | semiconductor device diode | 16952 | RFQ |
| 1N813 | itt semiconductors | semiconductor device diode | 14433 | RFQ |
| 1N813 | fairchild semiconductor corp | semiconductor device diode | 07263 | RFQ |
| 1N813 | semitronics corp | semiconductor device diode | 31338 | RFQ |
| 1N813 | semiconductor components industries | semiconductor device diode | 12102 | RFQ |
| 1N813 | csr industries inc | semiconductor device diode | 11058 | RFQ |
| 1N813 | burns aerospace corp | semiconductor device diode | 27622 | RFQ |
| RELEASE3500 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N813 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| JAN1N813 | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N813 | general semiconductor inc | semiconductor device diode | 14936 | RFQ |
| 661807-1 | lucas france sa | semiconductor device diode | f6103 | RFQ |
| 1N813 | solitron devices inc | semiconductor device diode | 21845 | RFQ |
| 661807-001 | lucas france sa | semiconductor device diode | f6103 | RFQ |
| 1N813 | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
| 661807-001 | goodrich actuation systems ltd | semiconductor device diode | f1688 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM REVERSE VOLTAGE,PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -5.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE3500 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| Relevant Components for NSN - 5961-00-136-1831, 5961001361831 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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