| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-136-1831 (001361831) |
| NCB Code | USA (00) |
| Manufacturer | Burns Aerospace Corp, Telcom Semiconductor Inc, Electronic Industries Inc, Semitronics Corp, Goodrich Actuation Systems Ltd, C O D I Corp, Solitron Devices Inc, Coherent Component Corp, General Semiconductor Inc, Gilbert Engineering Co Inc, Csr Industries Inc, Semiconductor Components Industries, International Diode Corp, Military Specifications, Western Semiconductors Div, Lucas France Sa, Fairchild Semiconductor Corp, Itt Semiconductors |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1N813 | burns aerospace corp | semiconductor device diode | 27622 | RFQ |
| 1N813 | telcom semiconductor inc | semiconductor device diode | 15818 | RFQ |
| 1N813 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N813 | semitronics corp | semiconductor device diode | 31338 | RFQ |
| 661807-1 | goodrich actuation systems ltd | semiconductor device diode | f1688 | RFQ |
| 1N813 | c o d i corp | semiconductor device diode | 16352 | RFQ |
| 1N813 | solitron devices inc | semiconductor device diode | 21845 | RFQ |
| 1N813 | coherent component corp | semiconductor device diode | 16952 | RFQ |
| 1N813 | general semiconductor inc | semiconductor device diode | 14936 | RFQ |
| 1N813 | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
| 1N813 | csr industries inc | semiconductor device diode | 11058 | RFQ |
| 1N813 | semiconductor components industries | semiconductor device diode | 12102 | RFQ |
| RELEASE3500 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N813 | international diode corp | semiconductor device diode | 16068 | RFQ |
| JAN1N813 | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N813 | western semiconductors div | semiconductor device diode | 12711 | RFQ |
| 661807-1 | lucas france sa | semiconductor device diode | f6103 | RFQ |
| 1N813 | fairchild semiconductor corp | semiconductor device diode | 07263 | RFQ |
| 661807-001 | goodrich actuation systems ltd | semiconductor device diode | f1688 | RFQ |
| 1N813 | itt semiconductors | semiconductor device diode | 14433 | RFQ |
| 661807-001 | lucas france sa | semiconductor device diode | f6103 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM REVERSE VOLTAGE,PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -5.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE3500 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| Relevant Components for NSN - 5961-00-136-1831, 5961001361831 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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